Storage apparatus and semiconductor apparatus

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S100000

Reexamination Certificate

active

11225593

ABSTRACT:
A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and that the application of an electric signal not lower than a second threshold signal, which has a polarity different from that of the first threshold signal, allows the storage element to shift form a low resistance value state to a high resistance value state, and a circuit element connected to the storage element in series to be a load; wherein the memory devices are arranged in a matrix and one terminal of each of the memory devices is connected to a common line; and wherein an intermediate potential between a power supply potential and a ground potential is applied to the common line.

REFERENCES:
patent: 6404668 (2002-06-01), Kowarik et al.
patent: 6856536 (2005-02-01), Rinerson et al.
patent: 7167387 (2007-01-01), Sugita et al.
patent: 2005/0248978 (2005-11-01), Chen et al.

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