Storage and semiconductor device

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

11243342

ABSTRACT:
A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.

REFERENCES:
patent: 6888745 (2005-05-01), Ehiro et al.
patent: 6888773 (2005-05-01), Morimoto
patent: 6937505 (2005-08-01), Morikawa
patent: 6992920 (2006-01-01), Tamai et al.
patent: 7016222 (2006-03-01), Morikawa
patent: 7057922 (2006-06-01), Fukumoto
patent: 7092278 (2006-08-01), Ishida et al.
patent: 7106618 (2006-09-01), Morimoto
patent: 7133310 (2006-11-01), Hidaka
patent: 7167387 (2007-01-01), Sugita et al.
patent: 7203088 (2007-04-01), Ikegawa et al.
patent: 2006/0067114 (2006-03-01), Hachino et al.

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