Storage and recovery of data based on change in MIS...

Details Storage and recovery of data based on change in MIS... Storage and recovery of data based on change in MIS...

2006-12-12

2006-12-12

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S182000, C365S185080

Reexamination Certificate

active

07149104

ABSTRACT:
A memory circuit includes a latch having a first node and a second node, a word selecting line, a first MIS transistor having the source/drain nodes thereof coupled to the first node and a predetermined node, respectively, and the gate node thereof coupled to the word selecting line, a second MIS transistor having the source/drain nodes thereof coupled to the second node and the predetermined node, respectively, and the gate node thereof coupled to the word selecting line, and a control circuit configured to subject in a write mode, one of the first MIS transistor and the second MIS transistor to bias conditions that cause a lingering change in transistor characteristics thereof, and to subject in a recovery mode both the first MIS transistor and the second MIS transistor for equal amount of time to equal bias conditions that cause a lingering change in transistor characteristics thereof.

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patent: 2005/0232009 (2005-10-01), Nakamura
patent: 06 076582 (1994-03-01), None
patent: WO 2004 057621 (2004-07-01), None

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