Stopper manufacturing method of a silicon micromachining structu

Details Stopper manufacturing method of a silicon micromachining structu Stopper manufacturing method of a silicon micromachining structu

1994-11-01

1997-10-07

Powell, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 99, 1566281, 1566571, 1566621, H01L 2100, B44C 122

Patent

active

056744064

ABSTRACT:
A stopper manufacturing method of a silicon micromachining structure comping steps of growing an oxidized film on a n-type substrate; opening a n.sup.+ -diffusion window by the photo-lithography through first selective diffusion and forming a n.sup.+ -diffusion region using n-type impurity sources; forming a n.sup.+ diffusion region by the depth 0.5 to 5 .mu.m on the portion subject to form a stopper through the secondary diffusion; removing the oxidized film and growing a n-type silicon epitaxial layer on the front surface of the substrate; etching the n-type silicon epitaxial layer, selectively, exposing the n.sup.+ -layer and depositing a porous silicon layer in HF solution by the anodic reaction; and etching the porous silicon layer away in etching solution to form a microstructure, thereby preventing the side etching and the breaking down of the microstructure by the exterior shock.

REFERENCES:
patent: 4581624 (1986-04-01), O'Connor
patent: 4808549 (1989-02-01), Mikkor et al.

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