Stochastic synapse memory element with spike-timing...

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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C365S189120, C365S194000, C365S226000

Reexamination Certificate

active

07978510

ABSTRACT:
An active memory element is provided. A bipolar memory two-terminal element includes polarity-dependent switching. A probability of switching of the bi-polar memory element between a first state and a second state decays exponentially based on time delay and a difference between received signals at the two terminals and a switching threshold magnitude.

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