STI of a semiconductor device and fabrication method thereof

Details STI of a semiconductor device and fabrication method thereof STI of a semiconductor device and fabrication method thereof

2007-01-10

2009-06-02

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S359000, C257SE21548, C257SE29020, C257S510000

Reexamination Certificate

active

07541298

ABSTRACT:
A method for filling silicon oxide materials into a trench includes providing a substrate having a plurality of trenches, performing a first deposition process to form a first silicon oxide layer in the trenches, and performing a second deposition process to form a second silicon oxide layer in the trenches. The reactant gas of the first deposition process has a first O3/TEOS flow ratio larger than a second O3/TEOS flow ratio of the reactant gas of the second deposition process.

REFERENCES:
patent: 6043136 (2000-03-01), Jang et al.
patent: 6360685 (2002-03-01), Xia et al.
patent: 2006/0029736 (2006-02-01), S. Sandhu et al.
patent: 2006/0054989 (2006-03-01), Kim et al.
patent: 2007/0020875 (2007-01-01), Hsu

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