STI fill for SOI which makes SOI inspectable

Details STI fill for SOI which makes SOI inspectable STI fill for SOI which makes SOI inspectable

1999-01-04

2000-09-19

Nguyen, Tuan H.

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

257 48, 356237, 438424, H01L 2166

Patent

active

061210641

ABSTRACT:
A method of manufacturing and inspecting SOI such that during STI formation, by depositing a light absorbing layer in the STI such as hydrosilicon oxynitride, the silicon inclusions in the buried insulator layer of the SOI are undetectable by an optical inspection. The reduction in background effects allows for improved optical inspection of SOI wafers without having to discriminate against defects created by SOI formation. A method of manufacturing and inspecting semiconductor devices is disclosed wherein deposition of a light absorbing layer, such as hydrosilicon oxynitride, prevents defects occurring prior to deposition from being optically inspectable and those defects created during the most recent processing can be easily distinguished. Also disclosed are an optically inspectable semiconductor device and an optically inspectable semiconductor device having an STI.

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Ogawa e al.; Practical resolution enhancement effect by new complete anti-reflective layer in KrF excimer laser lithography; SPIE vol. 1927, Optical/Laser Microlithography VI, (Feb., 1993), pp. 263-274.

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