Stepped tip junction with spacer layer

Details Stepped tip junction with spacer layer Stepped tip junction with spacer layer

2006-09-26

2006-09-26

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S900000, C438S303000

Reexamination Certificate

active

07112859

ABSTRACT:
Embodiments of the invention provides a stepped tip junction region between a source/drain region of a transistor and a gate. In some embodiments, a spacer of the transistor includes a tip junction spacer layer and a source/drain spacer layer.

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