Step-up semiconductor integrated circuit and electronic equipmen

Details Step-up semiconductor integrated circuit and electronic equipmen Step-up semiconductor integrated circuit and electronic equipmen

1994-02-17

1997-11-25

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, 257532, H01L 2701, H01L 2900

Patent

active

056915560

ABSTRACT:
To avoid the parasitic bipolar effect occurring in MOS type devices, a monolithic boosting integrated circuit is formed using dielectrically isolated charge boosting elements. Each boosting element is formed of a rectifying element and a charge storing element connected in series. A semiconductor on insulator substrate is formed with a supporting substrate, an insulating layer and a semiconductor layer. The charge boosting elements are formed in the semiconductor layer and are electrically isolated using a dielectric film deposited over the semiconductor layer. By isolating the devices from the substrate, the parasitic bipolar effect is avoided and downsizing is possible thus permitting the formation of complex circuitry in a monolithic integrated circuit package.

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