Step coverage enhancement process for sub half micron contact/vi

Details Step coverage enhancement process for sub half micron contact/vi Step coverage enhancement process for sub half micron contact/vi

1996-04-08

1997-08-05

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438644, 438672, 438712, 438720, 438653, 438654, H01L 21283

Patent

active

056542330

ABSTRACT:
A Process for creating a planar topography and enhanced step coverage for the fabrication of contact/via holes in sub-half-micron diameter range with high height vs. dimension aspect ratio. This is accomplished by interrupting the deposition of the barrier layer in the contact/via lining with a programmed reactive ion etching process, which will protect the thin barrier lining in the bottom part of the contact hole, but will etch off and planarize the excessively thick barrier layer near the opening of the hole. The resulting barrier layers show a disrupt columnar film structure which provides better barrier during subsequent metal fill deposition process.

REFERENCES:
patent: 5187120 (1993-02-01), Wang

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