Stencil process for high resolution pattern replication

Details Stencil process for high resolution pattern replication Stencil process for high resolution pattern replication

1973-06-18

1977-03-22

Van Horn, Charles E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156600, 427248R, 427282, 427307, 156656, 156657, 156661, C23C 1308

Patent

active

040135020

ABSTRACT:
A method and apparatus for the replication of thin film patterns. A stencil is fabricated of a material such as silicon by etching or epitaxially growing on the silicon wafer. The stencil is used as a shadow mask in molecular beam deposition of the thin film pattern. The technique provides high yields in the formation of relatively large scale thin film patterns.

REFERENCES:
patent: 3713922 (1973-01-01), Lepselter et al.
patent: 3718503 (1973-02-01), Glendinning et al.
patent: 3737346 (1973-06-01), Godfrey
patent: 3738881 (1973-06-01), Erdman et al.
patent: 3839108 (1974-10-01), Leinkram

Affiliated with

Also associated with

Rating

Stencil process for high resolution pattern replication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stencil process for high resolution pattern replication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stencil process for high resolution pattern replication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1954728