Stationary focus ring for plasma reactor

Details Stationary focus ring for plasma reactor Stationary focus ring for plasma reactor

1994-06-22

1996-09-03

Walsh, Donald P.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156345, 2041921, 20429831, 42218605, 118723FI, C23C 1602

Patent

active

055521240

ABSTRACT:
A stationary focus ring for use in a plasma reactor during wafer processing includes a first slotted opening through which a wafer transfer blade and wafer may pass, and includes a second slotted opening, where the two openings cooperate to provide a balanced gas flow distribution across the wafer surface, such that process uniformity is achieved across the wafer surface, while minimizing the actual size of the openings to provide an increased level of reaction commensurate with that of a solid, movable focus ring. Alternatively, a thick focus ring that displaces chamber volume and thereby stabilizes gas flow within the chamber has a circular, an eccentric, and/or a baffle configuration to provide uniform gas flow distribution across the wafer surface.

REFERENCES:
patent: 4612432 (1986-09-01), Sharp-Geisler
patent: 5213658 (1993-05-01), Ishida
patent: 5246532 (1993-09-01), Ishida
patent: 5384009 (1995-01-01), Mak et al.
patent: 5405491 (1995-04-01), Shahvandi et al.
U.S. Patent Application Serial No. 08/223,335, filed Apr. 5, 1994, entitled Improved Focus Ring for Semiconductor Wafer Processing in a Plasma Reactor .

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