Static semiconductor memory with improved write recovery and col

Static information storage and retrieval – Read/write circuit

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36518902, 365203, 36523002, G11C 11407, G11C 11408, G11C 11409

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active

049758772

ABSTRACT:
A static random access memory (SRAM) having a reduced access time for reading and reduced probability of inadvertent writing operations. Switching circuits (multiplexers) that are used to connect column bit lines with reading and writing circuits of the memory are divided into separate circuits for use during read and write operations. A recovery pulse is applied only to bit lines of a column just written to by use of the driving circuits through the same column line switching circuits.

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