Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1996-10-16
1999-09-28
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
365175, 365190, 365205, G11C 700
Patent
active
059599014
ABSTRACT:
In a semiconductor memory including first and second bit lines complementary to each other and provided for each one memory cell column, and a sense amplifier connected to the first and second bit lines, for sensing and amplifying a voltage difference between the first and second bit lines, a first pull-up circuit is connected to the first bit line, for pulling up, in accordance with a potential of the second bit line, the first bit line to a high voltage supply potential. A second pull-up circuit is connected to the second bit line, for pulling up, in accordance with a potential of the second bit line, the second bit line to a high level potential lower than that the high voltage supply potential by a predetermined potential difference.
REFERENCES:
patent: 4866674 (1989-09-01), Tran
patent: 5229967 (1993-07-01), Nogle et al.
patent: 5475639 (1995-12-01), Iwase et al.
patent: 5574687 (1996-11-01), Nakase
NEC Corporation
Yoo Do Hyun
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