Static semiconductor memory device with predetermined threshold

Details Static semiconductor memory device with predetermined threshold Static semiconductor memory device with predetermined threshold

1990-07-03

1991-05-28

Bowler, Alyssa H.

Static information storage and retrieval

Systems using particular element

Flip-flop

365148, 36518901, 357 235, G11C 700, G11C 1140, G11C 1100

Patent

active

050200291

ABSTRACT:
A high resistance/load type memory cell of a static semiconductor memory device includes two load elements, two driver transistors, and two access transistors. The threshold voltage of each driver transistor is set at a high value so that the OFF resistance value of the driver transistor is 10 to 100 times the resistance value of each load resistance. The threshold voltage of each access transistor is set to be lower than the threshold voltage of each driver transistor so that the OFF resistance value of the access transistor is twice to 10 times the resistance value of each load resistance. Thus, power consumption in a standby state is reduced, while data holding characteristics of the memory cell are stabilized in selected and non-selected states.

REFERENCES:
patent: 4797804 (1989-01-01), Rockett, Jr.
patent: 4805148 (1989-02-01), Diehl-Nagle et al.
patent: 4852060 (1989-07-01), Rockett, Jr.

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