Static semiconductor memory device driving bit line potential by

Details Static semiconductor memory device driving bit line potential by Static semiconductor memory device driving bit line potential by

1997-07-17

1999-10-12

Nelms, David

Static information storage and retrieval

Systems using particular element

Semiconductive

365155, 365179, 3652256, G11C 1134

Patent

active

059663243

ABSTRACT:
Memory cells which are adjacent to each other along a column direction share a bipolar transistor driving the potential level of a corresponding bit line. Other memory cells which are adjacent to each other in the column direction share another bipolar transistor driving the potential level of another corresponding bit line. Each bipolar transistor drives the potential level of the corresponding bit line in response to storage information of a selected memory cell, whereby data can be read at a high speed with a low power supply voltage.

REFERENCES:
patent: 5016214 (1991-05-01), Laymoun
patent: 5483383 (1996-01-01), Choi et al.
patent: 5673230 (1997-09-01), Kuriyama
patent: 5677866 (1997-10-01), Kinoshita

Affiliated with

Also associated with

Rating

Static semiconductor memory device driving bit line potential by does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static semiconductor memory device driving bit line potential by, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static semiconductor memory device driving bit line potential by will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-658721