Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-21
1999-03-23
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257903, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058863885
ABSTRACT:
NMOS transistors as well as pMOS transistors are formed in an SOI layer. One of the impurity diffusion regions of the transistors are respectively connected. A longitudinal end of polysilicon layer extends in one direction to be connected to one of the impurity diffusion regions of transistor. A longitudinal end of a polysilicon layer extends in a direction which is opposite from the above mentioned one direction to be connected to one of the impurity diffusion regions of transistor. As a result, the area for a memory cell region in a static semiconductor memory device can be reduced, and the interconnection structure can be simplified.
REFERENCES:
patent: 4910576 (1990-03-01), Campbell et al.
patent: 5206533 (1993-04-01), Houston
patent: 5646423 (1997-07-01), Megaro et al.
Kuriyama Hirotada
Wada Tomohisa
Meier Stephen D.
Mitsubishi Denki & Kabushiki Kaisha
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