Static semiconductor memory device

Static information storage and retrieval – Systems using particular element – Flip-flop

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365190, G11C 700

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active

045717036

ABSTRACT:
A static memory device includes memory cells arranged in the form of a matrix. The memory cells are each formed of a flip-flop circuit and first and second MOS transistors whose current paths are each coupled between a corresponding one of first and second bistable output nodes of the flip-flop circuit and a corresponding one of paired digit lines and whose gates are coupled to first and second word lines, respectively.

REFERENCES:
patent: 4447891 (1984-05-01), Kadota
Arzwbi, "Two-Device Storage Cell", IBM Tech. Disclosure Bulletin, vol. 18, No. 3, Aug. 1975, pp. 649-650.
Introduction to VLSI Systems, Chap. 5, Sec. 5.9, Register Array, p. 163; 1980.

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