Static semiconductor memory device

Details Static semiconductor memory device Static semiconductor memory device

2008-01-17

2010-11-09

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000, C257S331000, C257S334000, C257S347000, C257S351000, C257SE21661, C257SE21703, C257SE27098, C257SE27099, C365S154000, C365S189090, C365S189110, C438S231000, C438S238000, C438S270000

Reexamination Certificate

active

07829942

ABSTRACT:
A first transfer transistor includes a first diffusion layer connected to a first bit line, and a second diffusion layer connected to a first storage node, the first diffusion layer is provided in a substrate, the second diffusion layer is provided in a bottom part of a recess provided in the substrate, a channel region of the first transfer transistor is offset with respect to the second diffusion layer toward the first storage node, and the offset part functions as a resistor.

REFERENCES:
patent: 4920397 (1990-04-01), Ishijima
patent: 5122846 (1992-06-01), Haken
patent: 5981995 (1999-11-01), Selcuk
patent: 6309930 (2001-10-01), Goebel et al.
patent: 02-141992 (1990-05-01), None
patent: 05-304274 (1993-11-01), None

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