Static semiconductor memory device

Details Static semiconductor memory device Static semiconductor memory device

1992-06-19

1994-08-09

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257379, H01L 2906, H01L 2978

Patent

active

053369149

ABSTRACT:
A MOS SRAM comprising memory cells capable of taking up less areas is disclosed. The flip-flop of a memory cell is connected to a pair of bit lines through a pair of transfer MOSFETs each corresponding to a bit line. At least one, preferably one on the flip-flop side, of the source and drain regions of each transfer MOSFET has a higher resistance. This enables to prevent damage of data which may happen during readout even in the case of use of finer word lines, and therefore contributes to the realization of the SRAM cell taking up relatively less area.

REFERENCES:
patent: 4541006 (1985-09-01), Arizumi
patent: 4780847 (1988-10-01), Ito

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