Static semiconductor memory cell with improved data retention st

Details Static semiconductor memory cell with improved data retention st Static semiconductor memory cell with improved data retention st

1998-02-06

1999-10-05

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, 365177, 3652256, G11C 1100

Patent

active

059634707

ABSTRACT:
In a SRAM cell including a bipolar transistor and a cut transistor, the threshold Vtheff (Driver) of driver transistor and the threshold Vtheff (Cut) of cut transistor are set such that they satisfy the expressions,

REFERENCES:
patent: 4868628 (1989-09-01), Simmons
patent: 5483483 (1996-01-01), Choi et al.
patent: 5740102 (1998-04-01), Kawashima
patent: 5764565 (1998-06-01), Sato et al.

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