Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1992-03-27
1994-08-23
LaRoche, Eugene R.
Static information storage and retrieval
Systems using particular element
Flip-flop
365174, G11C 1100
Patent
active
053413270
ABSTRACT:
An object of the present invention is to miniaturize a structure of a memory cell in an SRAM. The memory cell in the SRAM includes a pair of access transistors, a pair of driver transistors and a pair of load transistors. The six transistors are thin film transistors. A plurality of thin film transistors are provided on a surface of a silicon substrate, forming a plurality of layers with an interlayer insulating layer interposed therebetween.
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"A 5.9 .mu.m.sup.2 Super Low Power Sram Cell Using a New Phase-Shift Lithography", IEDM 1990 Technical Digest, by T. Yamanaka et al, pp. 18.3.1-18.3.4, 1990.
International Electron Devices Meeting, Dec. 1990, pp. 477-480, T. Yamanaka et al., "A 5.9 .mu.m Super Low Power Sram Cell Using a New Phase-Shift Lithography".
IEEE Journal of Solid-State Circuits, vol. SC-20, No. 1, Feb. 1985, pp. 178-201, S. D. S. Malhi et al. "Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrstalline Silicon".
LaRoche Eugene R.
Mitsubishi Denki & Kabushiki Kaisha
Niranjan F.
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