Static random access memory with rewriting circuit

Details Static random access memory with rewriting circuit Static random access memory with rewriting circuit

1999-06-09

2000-10-24

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, 365190, G11C 1100

Patent

active

061377155

ABSTRACT:
A static random access memory for improving the cell stability during read/write operation is provided. The SRAM comprises: a bit line and an inverted bit line; a memory cell coupled between the bit line and the inverted bit line for storing data; and a re-writing circuit coupled between the bit line and the inverted bit line for re-writing the data stored in the memory cell to the memory cell, in response to, at least, one read/write control signal for controlling read/write operation of the memory cell. The SRAM of this invention can be stably operated under low power voltage and/or at low temperature.

REFERENCES:
patent: 4608666 (1986-08-01), Uchida
patent: 4811303 (1989-03-01), Hirai
patent: 4866674 (1989-09-01), Tran
patent: 4953127 (1990-08-01), Nagahashi et al.
patent: 5422856 (1995-06-01), Sasaki et al.
patent: 5724292 (1998-03-01), Wada
patent: 5793696 (1998-08-01), Tanaka et al.
patent: 5808956 (1998-09-01), Maruyama

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