Static random-access memory with boosted voltages

Details Static random-access memory with boosted voltages Static random-access memory with boosted voltages

2011-06-07

2011-06-07

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S226000, C365S189020

Reexamination Certificate

active

07957177

ABSTRACT:
Dual port memory elements and memory array circuitry that utilizes elevated and non-elevated power supply voltages for performing reliable reading and writing operations are provided. The memory array circuitry may contain circuitry to switch a power supply line of a column of memory elements in the array to an appropriate power supply voltage during reading and writing operations. Each memory element may contain circuitry to select between power supply voltages during reading and writing operations. During reading operations, an elevated voltage may power cross-coupled inverters that store data in the memory elements while a non-elevated voltage may be used to turn on associated address transistors. During writing operations, the non-elevated voltage may power the cross-coupled inverters while the elevated voltage may be used to turn on the associated address transistors.

REFERENCES:
patent: 5025417 (1991-06-01), Miyamoto et al.
patent: 5122846 (1992-06-01), Haken
patent: 5214327 (1993-05-01), Saeki et al.
patent: 5432467 (1995-07-01), Reddy
patent: 5642315 (1997-06-01), Yamaguchi
patent: 5757702 (1998-05-01), Iwata et al.
patent: 5801551 (1998-09-01), Lin
patent: 5920201 (1999-07-01), Mehrotra et al.
patent: 6114843 (2000-09-01), Olah
patent: 6232893 (2001-05-01), Cliff et al.
patent: 6404670 (2002-06-01), Shau
patent: 6433585 (2002-08-01), Patel et al.
patent: 6724222 (2004-04-01), Patel et al.
patent: 6795332 (2004-09-01), Yamaoka et al.
patent: 6891745 (2005-05-01), Liaw
patent: 6897679 (2005-05-01), Cliff et al.
patent: 6995584 (2006-02-01), Nguyen et al.
patent: 7277351 (2007-10-01), Liu et al.
patent: 2004/0093529 (2004-05-01), Devlin et al.
patent: 2007/0041242 (2007-02-01), Okazaki et al.
patent: 2007/0109017 (2007-05-01), Liu et al.
patent: 2007/0113106 (2007-05-01), Liu et al.
patent: 2007/0258313 (2007-11-01), Yu et al.
patent: 2008/0198679 (2008-08-01), Lysinger et al.
U.S. Appl. No. 11/799,228, filed Apr. 30, 2007, Vest et al.

Affiliated with

Also associated with

Rating

Static random-access memory with boosted voltages does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static random-access memory with boosted voltages, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random-access memory with boosted voltages will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2658389