Static random access memory utilizing gated diode technology

Details Static random access memory utilizing gated diode technology Static random access memory utilizing gated diode technology

2006-11-14

2006-11-14

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S175000

Reexamination Certificate

active

07136296

ABSTRACT:
A new type of static RAM cell is disclosed that is based on a gated diode and its voltage amplification characteristic. The cell combines the advantages of a static RAM, in which data refresh is not needed, and those of gated diode cells, which are scalable to low voltages, have high signal to noise ratio, high signal margin, and tolerance to process variations, to form a single high performance static memory cell. This new cell has independent read and write paths, which allow for separate optimization of the read (R) and write (W) events, and enable dual-port R/W operation. Furthermore, storage node disturbance during the read and write operations are eliminated, which greatly improves cell stability and scalability for future technologies.

REFERENCES:
patent: 5046044 (1991-09-01), Houston et al.
patent: 6128216 (2000-10-01), Noble et al.
patent: 7027326 (2006-04-01), Luk et al.
patent: 7038938 (2006-05-01), Kang

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