Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-07-24
2007-07-24
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S154000, C365S202000, C365S189070
Reexamination Certificate
active
11218601
ABSTRACT:
A static random access memory (SRAM) includes a memory array, a sense amplifier circuit, a replica circuit and a dummy cell. The replica circuit has the same elements as memory cells, and includes plural replica cells which output a signal whose level corresponds to the number of stages provided to a common replica bit line. The dummy cell is connected as a load with the common replica bit line. The source of a drive transistor of the dummy cell is connected with a power source which is at the High level. This suppresses a leak current flowing from a replica bit line to the dummy cell.
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Akamatsu Hironori
Itoh Kazuo
Ohtsuki Hirohisa
Satomi Katsuji
Hur J. H.
Stevens Davis Miller & Mosher LLP
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