Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1990-11-28
1993-06-22
LaRoche, Eugene R.
Static information storage and retrieval
Systems using particular element
Flip-flop
365154, 257403, G11C 1100
Patent
active
052220397
ABSTRACT:
A static random access memory (SRAM) cell uses a pair of conventional cross-coupled MOSFET devices including an inversion layer, and a pair of inversion-free Fermi threshold FET devices, of the same conductivity type as the cross-coupled transistor pair, for resistive loads. The Fermi-FETs provide a high valued resistor, the value of which is independent of current variations and which is easily fabricated without the need to control polycrystalline silicon grain size. The Fermi-FETs may also provide temperature compensation of the SRAM cell so that it is operable over a wide range of temperature. Fermi-FETs may also be used for the pass transistors of the SRAM cell with the Fermi-FET's low gate capacitance minimizing the loading of the word line. A high speed, dense SRAM cell is provided. The Fermi-FET may also be used in other applications which require low input capacitance, high value constant resistance and temperature compensation.
REFERENCES:
patent: Re32993 (1989-07-01), Anami et al.
patent: 4733112 (1988-03-01), Yamaguchi
patent: 4739497 (1988-04-01), Itoh et al.
patent: 4779226 (1988-10-01), Haraszti
patent: 4779230 (1988-10-01), McLaughlin et al.
patent: 4825413 (1989-04-01), Tran
patent: 4831287 (1989-05-01), Golab
patent: 4833648 (1989-05-01), Scharrer et al.
patent: 4839862 (1989-06-01), Shiba et al.
patent: 4843264 (1989-06-01), Galbraith
patent: 4845672 (1989-04-01), Watanabe et al.
patent: 4855957 (1989-08-01), Nogami
patent: 4858189 (1989-08-01), Ogiue et al.
patent: 4858191 (1989-08-01), Higuchi et al.
patent: 4862421 (1989-08-01), Tran
patent: 4866674 (1989-09-01), Tran
patent: 4873665 (1989-10-01), Jiang et al.
patent: 4876669 (1989-10-01), Yamamoto et al.
patent: 4881203 (1989-11-01), Watanabe et al.
patent: 4888737 (1989-12-01), Sato
patent: 4890141 (1989-12-01), Tang et al.
patent: 4890144 (1989-12-01), Teng et al.
patent: 4893278 (1990-01-01), Ito
patent: 4901279 (1990-02-01), Plass
patent: 4901284 (1990-02-01), Ochii et al.
patent: 4907203 (1990-03-01), Wada et al.
patent: 4914634 (1990-04-01), Akrout et al.
patent: 4990974 (1991-02-01), Vinal
International Search Report, Patent Cooperation Treaty, International Appln. No. PCT/US 91/08550, Feb. 17, 1992.
Dinh Son
LaRoche Eugene R.
Thunderbird Technologies, Inc.
LandOfFree
Static random access memory (SRAM) including Fermi-threshold fie does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Static random access memory (SRAM) including Fermi-threshold fie, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memory (SRAM) including Fermi-threshold fie will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1444804