Static random access memory (SRAM) cell

Details Static random access memory (SRAM) cell Static random access memory (SRAM) cell

2007-11-13

2007-11-13

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S154000, C365S063000

Reexamination Certificate

active

11201168

ABSTRACT:
An SRAM memory cell employing thin-film transistors is provided having a first transmission gate, a second transmission gate and a bi-stable flip-flop comprising a first and a second inverter disposed between the first and the second transmission gate. A third transmission gate is coupled between an output terminal of the second inverter and an input terminal of the first inverter.

REFERENCES:
patent: 5301146 (1994-04-01), Hama
patent: 6058041 (2000-05-01), Golke et al.
patent: 6097664 (2000-08-01), Nguyen et al.
patent: 6275080 (2001-08-01), Phan et al.
patent: 6549443 (2003-04-01), Jensen et al.
patent: 2 360 113 (2001-09-01), None
patent: 4-298893 (1992-10-01), None
patent: 2001-283588 (2001-10-01), None
patent: WO 03/085673 (2003-10-01), None

Affiliated with

Also associated with

Rating

Static random access memory (SRAM) cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static random access memory (SRAM) cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memory (SRAM) cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3820327