Static random access memory semiconductor layout

Details Static random access memory semiconductor layout Static random access memory semiconductor layout

1997-01-14

1998-11-03

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, 257537, 257904, G11C 1100

Patent

active

058318984

ABSTRACT:
A static random access memory device (SRAM) keeping a resistance value of a resistance element at a predetermined level regardless a process variation, by improving a special margin of a diffusion layer region at which the resistance element is formed and a node for connecting a gate electrode thereto. In the SRAM, there is provided a diffusion layer region in a substrate, having a first part of which may form a the resistance element, a second part of which is connected to the drain or source of the MIS access transistor, and a third part of which is connected to the source or drain of the MIS driver transistor and is defined the node, and there is provided an electrode layer connecting the gate of the MIS driver transistor and the node in the diffusion layer region. The diffusion layer region is formed so that the diffusion layer region is bent at the first part which may form the resistance element and is defined the node and a first direction between the first part and the second part and a second direction between the first part and the third part intersect at an obtuse angle.

REFERENCES:
patent: 5153852 (1992-10-01), Terrell
patent: 5377140 (1994-12-01), Usuki
patent: 5570311 (1996-10-01), Ema et al.

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