Static random access memory having variable supply voltages to t

Details Static random access memory having variable supply voltages to t Static random access memory having variable supply voltages to t

1996-10-17

1998-02-03

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, 36518909, 36518911, 365190, 365205, 36523003, 365227, 365229, G11C 11413

Patent

active

057151911

ABSTRACT:
A memory cell includes a load transistor pair serving as a high data holding element, a drive transistor pair serving as a low data holding element, and an access transistor pair for accessing the high data holding element or the low data holding element. A high data holding potential corresponding to the source potential of the load transistor pair is set at a value larger than a supply potential, and a low data holding potential corresponding to the source potential of the drive transistor pair is set at a value larger than a ground potential. In a read operation, a source potential control line of a selected memory cell is connected with a ground line through a source line switch.

REFERENCES:
patent: 5301147 (1994-04-01), Guo et al.
patent: 5303190 (1994-04-01), Pelley, III
patent: 5581500 (1996-12-01), D'Souza

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