Static random access memory having a read out control circuit co

Static information storage and retrieval – Read/write circuit – For complementary information

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Details

365154, G11C 1140, G11C 1300

Patent

active

044411693

ABSTRACT:
A MOSFET random access memory having a memory cell, an independent write-in switching means and an independent read-out control circuit. The read-out control circuit includes a first MOS transistor controlled by the data stored in the memory cell and a second MOS transistor controlled by a read-out control signal. When the data stored in the memory cell is read out, charge flow between the memory cell and the data line is prevented which results in high reliability.

REFERENCES:
patent: 4400800 (1983-08-01), Kurafuji

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