Static information storage and retrieval – Read/write circuit – For complementary information
Patent
1982-02-23
1984-04-03
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
For complementary information
365154, G11C 1140, G11C 1300
Patent
active
044411693
ABSTRACT:
A MOSFET random access memory having a memory cell, an independent write-in switching means and an independent read-out control circuit. The read-out control circuit includes a first MOS transistor controlled by the data stored in the memory cell and a second MOS transistor controlled by a read-out control signal. When the data stored in the memory cell is read out, charge flow between the memory cell and the data line is prevented which results in high reliability.
REFERENCES:
patent: 4400800 (1983-08-01), Kurafuji
Sasaki Itsuo
Suzuki Hiroaki
Fears Terrell W.
Tokyo Shibaura Denki Kabushiki Kaisha
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