Static random access memory having a flash clear function

Static information storage and retrieval – Read/write circuit – Erase

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36523003, 365194, 365227, G11C 700

Patent

active

049493086

ABSTRACT:
The invention provides a static random access memory wherein the peak value of current flow therethrough upon flash-clearing is minimized. The static random access memory comprises a memory cell array which is divided into a plurality of memory cell groups which are driven at mutually different timings for flash-clearing by means of a plurality of delay circuits connected in cascade to which the flash-clearing signal is applied.

REFERENCES:
patent: 4774691 (1988-09-01), Hidaya
patent: 4789967 (1988-12-01), Liou et al.
patent: 4813021 (1989-03-01), Kai et al.
Wada, T. et al, "A 34-ns 1-Mbit CMOS SRAM Using Triple Polysilicon", IEEE Journal of Solid-State Circuits, SC-22:5 (10/87), pp. 727-732.

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