Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1987-06-30
1991-07-23
Moffitt, James W.
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
365154, 36523003, G11C 11419
Patent
active
050349244
ABSTRACT:
A static RAM includes a plurality of chips. The chips each comprise a plurality of memory cells for storing data, column-selecting transistors, bit-lines to which the plurality of memory cells and the column-selecting transistors are connected, and a voltage control circuit which can adjust the electrical potential of the bit-lines so as to allow the column-selecting transistors to operate when selecting one of the chips. By use of the voltage control circuit, the static RAM can operate at a high speed when not only address selecting operation but also chip selecting operation is required.
REFERENCES:
patent: 4455627 (1984-06-01), Oritari
patent: 4621315 (1986-11-01), Vaughn et al.
patent: 4636991 (1987-01-01), Flannagan et al.
patent: 4665507 (1987-05-01), Gondou et al.
patent: 4730279 (1988-03-01), Ohtani
patent: 4791613 (1988-12-01), Hardee
Third Caltech Conference on Very Large Scale Integration, Mar. 23-23, 1983, pp. 278-285.
Ishio Keisuke
Taniguchi Hitoshi
Moffitt James W.
Sony Corporation
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