Static random access memory device having thin film transistor l

Details Static random access memory device having thin film transistor l Static random access memory device having thin film transistor l

1994-08-08

1996-02-13

Nguyen, Tan T.

Static information storage and retrieval

Systems using particular element

Flip-flop

365161, 365179, 365182, 257903, 257393, G11C 1134

Patent

active

054916542

ABSTRACT:
In a static random access memory device where thin film transistors are used memory cell loads, first and second semiconductor layers having source regions, channel regions and drain regions of the thin film transistors partly oppose first and second conductive layers serving as gate electrodes thereof. A third conductive layer for receiving a definite potential opposes at least the channel regions of the first and second semiconductor layers.

REFERENCES:
patent: 5281843 (1994-01-01), Ochii et al.
patent: 5331170 (1994-07-01), Hayashi
patent: 5334863 (1994-08-01), Uhkawa et al.
patent: 5391894 (1995-02-01), Itabashi et al.

Affiliated with

Also associated with

Rating

Static random access memory device having thin film transistor l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static random access memory device having thin film transistor l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memory device having thin film transistor l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-244655