Static random access memory device having high soft error immuni

Details Static random access memory device having high soft error immuni Static random access memory device having high soft error immuni

1994-12-19

1996-04-09

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, 257903, G11C 1100

Patent

active

055068022

ABSTRACT:
An SRAM having a TFT load element has a gate electrode of the load TFTs disposed between bit lines and channel regions of the load TFTs. The structure avoids formation of a parasitic transistor in which each of the bit lines would act as a gate electrode for the channel region of the TFT load element. The SRAM has a high soft error immunity even at a low supply voltage.

REFERENCES:
patent: 5281843 (1994-01-01), Ochii
patent: 5298764 (1994-03-01), Yamanaka

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