Static random access memory device having bit line voltage...

Details Static random access memory device having bit line voltage... Static random access memory device having bit line voltage...

2005-09-28

2011-11-22

Lappas, Jason (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including signal clamping

C365S203000

Reexamination Certificate

active

08064271

ABSTRACT:
A static random-access memory (SRAM) and a method of controlling bit line voltage. In one embodiment, the SRAM includes: (1) an array of SRAM cells organized in rows and columns, (2) bit lines associated with the columns, (3) a high voltage power supply configured to supply a high supply voltage, (4) a low voltage power supply configured to supply a low supply voltage, (5) bit line precharge circuitry configured to precharge at least one of the bit lines to a first voltage and (6) standby circuitry configured to maintain a voltage of the at least one bit line at least a second voltage, the second voltage being lower than the first voltage and higher than the low supply voltage.

REFERENCES:
patent: 4852064 (1989-07-01), Kim et al.
patent: 5548560 (1996-08-01), Stephens et al.
patent: 6141259 (2000-10-01), Scott et al.

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