Static random access memory device and manufacturing method ther

Details Static random access memory device and manufacturing method ther Static random access memory device and manufacturing method ther

1995-07-26

1997-06-17

Levy, Stuart S.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular power supply distribution means

257538, 257401, 257903, H01L 2710, H01L 2900, H01L 2976, H01L 2711

Patent

active

056400276

ABSTRACT:
A static random access memory (SRAM) device and a manufacturing method thereof are provided. In the SRAM memory device, a first active region of annular shape and a second active region bisecting the annulus are repeatedly formed over the whole cell array. Thus, since the contact hole for connecting the power line to the active region can be formed larger without increasing the cell size, contact resistance can be decreased. Also, the manufacturing method can be simplified since just one gate oxide layer formation process is needed.

REFERENCES:
patent: 4907057 (1990-03-01), Ariizumi et al.
patent: 5436506 (1995-07-01), Kim et al.
patent: 5485420 (1996-01-01), Lage et al.
Itabashi, K. et al., "A Split Wordline Cell for 16Mb SRAM Using Polysilicon Sidewall Contacts", IEDM (1991).
Ikeda, S. et al., "A Stacked Split Word-Line (SSW) Cell for Low Voltage Operation, Large Capacity, High Speed SRAMs", IEDM (1993).

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