Static random access memory cell with improved stability

Details Static random access memory cell with improved stability Static random access memory cell with improved stability

2008-07-08

2008-07-08

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S194000, C257S903000

Reexamination Certificate

active

07397691

ABSTRACT:
A memory cell comprises a wordline, a first digital inverter with a first input and a first output, and a second digital inverter with a second input and a second output. Moreover, the memory cell further comprises a first feedback connection connecting the first output to the second input, and a second feedback connection connecting the second output to the first input. The first feedback connection comprises a first resistive element and the second feedback connection comprises a second resistive element. What is more, each digital inverter has an associated capacitance. The memory cell is configured such that reading the memory cell includes applying a read voltage pulse to the wordline. In addition, the first and second resistive elements are configured such that the first and second feedback connections have resistance-capacitance induced delays longer than the applied read voltage pulse.

REFERENCES:
patent: 4953127 (1990-08-01), Nagahashi et al.
patent: 5126279 (1992-06-01), Roberts
patent: 5166902 (1992-11-01), Silver
patent: 5310694 (1994-05-01), Houston
patent: 5917212 (1999-06-01), Blake et al.
patent: 6271568 (2001-08-01), Woodruff et al.
patent: 6756692 (2004-06-01), Hirano et al.
patent: 6901017 (2005-05-01), Shimizu
patent: 6992916 (2006-01-01), Liaw

Affiliated with

Also associated with

Rating

Static random access memory cell with improved stability does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static random access memory cell with improved stability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memory cell with improved stability will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2803465