Static random-access memory cell with capacitive coupling to red

Details Static random-access memory cell with capacitive coupling to red Static random-access memory cell with capacitive coupling to red

1993-10-26

1996-11-05

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Flip-flop

365190, G11C 1100

Patent

active

055724604

ABSTRACT:
Radiation hardening for a static memory cell that centers around a pair of storage transistors (QS1 and QS2) coupled to a load (30) for storing a bit of information is achieved with a coupling capacitor (CC) situated between the storage transistors. In an MOS implementation, the coupling capacitor is typically implemented with a pair of capacitors (CC1 and CC2), each coupled between the drain and gate electrode of an associated one of the storage transistors.

REFERENCES:
patent: 3969708 (1976-07-01), Sonoda
patent: 4442509 (1984-04-01), Herndon
patent: 4532609 (1985-07-01), Iizuka
patent: 4780751 (1988-10-01), Nishimoto
Kerns et al, "The Design of Radiation-Hardened ICs for Space: A Compendium of Approaches," Procs. IEEE, Nov. 1988, pp. 1470-1509.
Ochoa et al, "A Proposed New Structure for SEU Immunity in SRAM Employing Drain Resistance," IEEE Elec. Dev. Lett., Nov. 1987, pp. 537-539.

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