Static random access memory cell using chalcogenide

Details Static random access memory cell using chalcogenide Static random access memory cell using chalcogenide

2005-06-22

2008-09-16

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S113000

Reexamination Certificate

active

07426135

ABSTRACT:
A static random access memory may be formed using a bitline and a bitline bar coupled to ovonic threshold switches. The ovonic threshold switches may, in turn, be coupled to cross coupled NMOS transistors. In some embodiments, a very compact static random access memory may result.

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