Static random access memory cell suitable for high integration d

Details Static random access memory cell suitable for high integration d Static random access memory cell suitable for high integration d

1995-07-10

2000-10-03

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257903, 257904, H01L 2976, H01L 2711

Patent

active

061277053

ABSTRACT:
Static random access memory (SRAM) cell is disclosed, which is suitable for high packing density and cell stabilization, including a substrate, a wordline formed over the substrate, including two parallel legs having gates of first and second access transistors, respectively, gates of first and second drive transistors formed between the two parallel legs, and an active area defined in a surface of the substrate under the gates of the first and second access transistors and gates of the first and second drive transistors.

REFERENCES:
patent: 5426065 (1995-06-01), Chan et al.
patent: 5804495 (1998-09-01), Saito et al.
Ikeda et al., "A Stacked Split Word-Line (SSW) cell for low voltage operation, large capacity, high speed SRAMs", IEEE, 1993, pp. 809-812.

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