Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1996-12-09
1999-03-23
Nelms, David
Static information storage and retrieval
Systems using particular element
Flip-flop
365156, G11C 1100
Patent
active
058869212
ABSTRACT:
An SRAM memory cell (40) uses GCMOS transistors (42, 44, 56, and 58) for improving discharge of complementary bit lines (60 and 62). The GCMOS transistors (42, 44, 56, and 58) have a graded-channel region on only the source side of the transistors. Configuring the pass-transistors (56 and 58) having the drain terminals connected to the complementary bit lines (60 and 62) and the cross-coupled transistors (42 and 44) having drain terminals connected to the memory cell outputs improves timing for a read operation of the memory cell (40).
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Caravella James S.
Davies Robert B.
Hong Merit Y.
Wild Andreas A.
Atkins Robert D.
Dover Rennie William
Motorola Inc.
Nelms David
Phan Trong
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