Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-13
1999-11-09
Dutton, Brian
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257393, 257903, H01L 2711, H01L 2976, H01L 2994, H01L 31062
Patent
active
059819952
ABSTRACT:
A static random access memory (SRAM) cell has a decreased cell size and utilizes transistors disposed in a number of trenches. Four trenches generally contain six transistors associated with the memory cell. The transistors are provided as sidewall transistors which are coupled to buried bit lines, VSS nodes, and VDD nodes at the bottom of the trenches. A first trench includes a driver transistor and a load transistor which have gates coupled together by a bridge over the trench. Another bridge is provided over the bridge over the trench to couple the source of the load transistor to the drain of the driver transistor. The drain of the driver transistor is coupled to another drain of the access gate transistor. The access gate transistor is located in a trench with a access gate transistor from another cell. The buried bit line is located in the trench with the access gate transistors.
REFERENCES:
patent: 4920397 (1990-04-01), Ishijima
patent: 5324973 (1994-06-01), Sivan
patent: 5705409 (1998-01-01), Witek
patent: 5814895 (1998-09-01), Hirayama
Advanced Micro Devices , Inc.
Dutton Brian
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