Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1999-01-26
1999-09-07
Mai, Son
Static information storage and retrieval
Systems using particular element
Flip-flop
365154, 257369, 257903, G11C 1100, H01L 2711
Patent
active
059497068
ABSTRACT:
A memory circuit and method of formation uses a transmission gate (24) as a select gate. The transmission gate (24) contains a transistor (30) which is an N-channel transistor and a transistor (28) which is a P-channel transistor. The transistors (28 and 30) are electrically connected in parallel. The use of the transmission gate (24) as a select gate allows reads and writes to occur to a memory cell storage device (i.e. a capacitor (32), a floating gate (22), etc.) without a significant voltage drop occurring across the transmission gate. In addition, EEPROM technology is more compatible with EPROM/flash technology when using a transmission gate as a select gate within EEPROM devices.
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K. Naruke et al., "Stress Induced Leakage Current Limiting to Scale Down EEPROM Tunnel Oxide Thickness", 1988 IEEE, pp. 424-426.
Chang Ko-Min
Cooper Kent J.
Kuo Clinton C. K.
Morton Bruce L.
Witek Keith E.
Mai Son
Motorola Inc.
Witek Keith E.
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