Static random access memory cell

Details Static random access memory cell Static random access memory cell

2007-02-28

2009-12-15

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S156000, C365S189160

Reexamination Certificate

active

07633793

ABSTRACT:
A static random access memory (SRAM) cell having an inverter and a tri-state inverter. An input of the inverter is coupled to an output of the tri-state inverter and an output of the inverter is coupled to an input of the tri-state inverter. The tri-state inverter has an enable node to which a read signal is applied and is configured to generate an output signal that is the complement of an input signal in response to an active read signal. The SRAM cell further includes an access transistor having a first node coupled to the output of the tri-state inverter and having a second node coupled to the digit line. The access transistor is configured to couple the first and second nodes in response to an active access signal applied to its gate.

REFERENCES:
patent: 4441169 (1984-04-01), Sasaki et al.
patent: 4779231 (1988-10-01), Holzapfel et al.
patent: 4876669 (1989-10-01), Yamamoto et al.
patent: 4956815 (1990-09-01), Houston
patent: 4972377 (1990-11-01), Lee
patent: 5212663 (1993-05-01), Leong
patent: 5353251 (1994-10-01), Uratani et al.
patent: 5473574 (1995-12-01), Clemen et al.
patent: 5506805 (1996-04-01), Hirose et al.
patent: 5515326 (1996-05-01), Hirose et al.
patent: 5991192 (1999-11-01), Wang et al.
patent: 6104045 (2000-08-01), Forbes et al.
patent: 6172899 (2001-01-01), Marr et al.
patent: 6173379 (2001-01-01), Poplingher et al.
patent: 6181608 (2001-01-01), Keshavarzi et al.
patent: 6205049 (2001-03-01), Lien et al.
patent: 6377084 (2002-04-01), Forbes
patent: 6388927 (2002-05-01), Churchill et al.
patent: 6534805 (2003-03-01), Jin
patent: 6570227 (2003-05-01), Rockett
patent: 6731566 (2004-05-01), Sywyk et al.
patent: 6762638 (2004-07-01), Correale, Jr. et al.
patent: 6798704 (2004-09-01), Chen et al.
patent: 6804143 (2004-10-01), Hobson
patent: 6822919 (2004-11-01), Sahoo
patent: 6849958 (2005-02-01), Madurawe
patent: 6853578 (2005-02-01), Zhang et al.
patent: 7088607 (2006-08-01), Matsuzawa et al.
patent: 7110304 (2006-09-01), Yu et al.
patent: 7116358 (2006-10-01), Sasaki
patent: 7139025 (2006-11-01), Berezin
patent: 7158403 (2007-01-01), Schmitt
patent: 2002/0020886 (2002-02-01), Rockett
patent: 2004/0007743 (2004-01-01), Matsuda et al.
patent: 2006/0245266 (2006-11-01), Sahara et al.

Affiliated with

Also associated with

Rating

Static random access memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static random access memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4093702