Static-random-access-memory cell

Details Static-random-access-memory cell Static-random-access-memory cell

1999-08-24

2000-12-19

Le, Vu A.

Static information storage and retrieval

Systems using particular element

Flip-flop

438149, 438199, 438200, G11C 1100

Patent

active

06163476&

ABSTRACT:
A 4-T SRAM cell includes access transistors of a first type and cell (pull-up or pull-down) transistors of a second type. For example, the cell includes PMOS access transistors and NMOS pull-down transistors. The cell may also include leaky-junction or Schottky loads.

REFERENCES:
patent: 5795800 (1998-08-01), Chan et al.
patent: 5981322 (1999-11-01), Keeth et al.

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