Static random access memory and pseudo-static noise margin...

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S156000, C257SE27098

Reexamination Certificate

active

07099182

ABSTRACT:
A first inverter includes a first load element and a first transistor, which are connected between first and second terminals in series, a first input terminal and a first output terminal. A second inverter includes a second load element and a second transistor, which are connected between third and fourth terminals in series, a second input terminal and a second output terminal. A first transfer transistor selectively and electrically connects the first output terminal and a first bit line. A second transfer transistor selectively and electrically connects the second output terminal and a second bit line. When data are read from the memory cell which comprises the first and second inverters and the first and second transfer transistors, a first potential is applied to the second terminal and a second potential different from the first potential is applied to the fourth terminal.

REFERENCES:
patent: 5680356 (1997-10-01), Yamauchi
patent: 5687178 (1997-11-01), Herr et al.
patent: 5946226 (1999-08-01), Chien et al.
patent: 6738283 (2004-05-01), Kasai et al.
“The Impact of Intrinsic Device Fluctuations on CMOS SRAM Cell Stability” Bhavnagarwala, A.J.; Xinghai Tang; Meindl, J.D.; Solid-State Circuits, IEEE Journal of vol. 36, Issue 4, Apr. 2001 pp.658-665.
“Static-Noise Margin Analysis of MOS SRAM Cells”Seevinck, E.; List, F.J.; Lohstroh, J.; Solid-State Circuits, IEEE Journal of vol. 22, Issue 5, Oct. 1987 pp.748-754.
“Noise Margin and Leakage in Ultra-Low Leakage SRAM Cell Design”Hook, T.B.; Breitwisch, M.; Brown, J.; Cottrell, P.; Hoyniak, D.; Chung Lam; Mann, R.; Electron Devices, IEEE Transactions on vol. 49, Issue 8, Aug. 2002 pp. 1499-1501.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Static random access memory and pseudo-static noise margin... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static random access memory and pseudo-static noise margin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memory and pseudo-static noise margin... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3656787

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.