Static random access memory allowing reading angle rotation

Static information storage and retrieval – Addressing – Multiple port access

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365154, 365156, 365190, G11C 800

Patent

active

054249953

ABSTRACT:
A plurality of first word lines are connected to a first word selector, and a plurality of second word lines are connected to a second word selector. A plurality of first bit lines are connected to a first bit selector, and a plurality of second bit lines are connected to a second bit selector. Each memory cell includes two inverters and first and second access gates. Each memory cell is connected to the first word line, the second word line, the first bit line and the second bit line. In data writing, data is written to a node through the first access gate. In data reading, data at the node or node is read through either the first or the second access gate.

REFERENCES:
patent: 4536859 (1985-08-01), Kamuro
patent: 4541076 (1985-09-01), Bowers et al.
patent: 4571703 (1986-02-01), Noda
patent: 4825098 (1989-04-01), Aoyama
patent: 5289432 (1994-02-01), Dhong et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Static random access memory allowing reading angle rotation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static random access memory allowing reading angle rotation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memory allowing reading angle rotation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1315948

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.