Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-07-16
2000-11-14
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257381, 257538, 257904, H01L 2976, H01L 2991, H01L 31062, H01L 31113, H01L 31119
Patent
active
061473871
ABSTRACT:
An SRAM is provided with a high-resistance element for loading including a high-resistance portion, which extends onto adjacent memory cell. An interlayer insulating film is formed between the high-resistance portions.
REFERENCES:
patent: 3570114 (1971-03-01), Bean et al.
patent: 6013940 (2000-01-01), Harada et al.
Guay John
Mitsubishi Denki & Kabushiki Kaisha
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