Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1995-07-05
1997-02-04
Nguyen, Tan T.
Static information storage and retrieval
Systems using particular element
Flip-flop
365156, G11C 1134
Patent
active
056005890
ABSTRACT:
A stable action of a memory cell in low voltage operation is realized, while assuring the reliability of the memory cell fined in structure for enhancing the degree of integration. An external supply voltage (V.sub.cc) is stepped down by a step-down transistor (Q1), and the stepped-down voltage is obtained as a potential for a bit line BIT. The external supply voltage (V.sub.cc) is also stepped down by a step-down transistor (Q5), and the stepped-down voltage is obtained as a potential for a bit line BIT. Furthermore, the external supply voltage (V.sub.cc) is stepped down by a step-down transistor (Q3), and the stepped-down voltage is obtained as an internal supply voltage for a memory cell (MC). On the contrary, to gate electrodes of both access transistors A1, A2, the external supply voltage V.sub.cc is directly applied through word drivers 1, 2, respectively.
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Ishigaki Yoshiyuki
Ukita Motomu
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Tan T.
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